Datasheet

T
O
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2
2
0
A
B
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
15 July 2013 Product data sheet
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1. General description
Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.
Product design and manufacture has been optimized for use in battery operated power
tools.
2. Features and benefits
High efficiency due to low switching and conduction losses
Robust construction for demanding applications
Standard level gate
3. Applications
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 [1] - - 150 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 338 W
Static characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 13
- 1.9 2.3 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 14
[2] - 1.3 1.6
Dynamic characteristics
Q
GD
gate-drain charge - 32 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 75 A; V
DS
= 20 V;
T
j
= 25 °C; Fig. 15; Fig. 16
- 136 - nC

Summary of content (14 pages)