Datasheet
T
O
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2
2
0
A
B
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
15 July 2013 Product data sheet
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1. General description
Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.
Product design and manufacture has been optimized for use in battery operated power
tools.
2. Features and benefits
•
High efficiency due to low switching and conduction losses
•
Robust construction for demanding applications
•
Standard level gate
3. Applications
•
Battery-powered tools
•
Load switching
•
Motor control
•
Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 [1] - - 150 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 338 W
Static characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 13
- 1.9 2.3 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 14
[2] - 1.3 1.6 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 32 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 75 A; V
DS
= 20 V;
T
j
= 25 °C; Fig. 15; Fig. 16
- 136 - nC