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PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using

NextPower technology

22 August 2012 Product data sheet

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1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

•

High reliability Power SO8 package, qualified to 175°C

•

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

•

Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

•

Ultra low Rdson and low parasitic inductance

1.3 Applications

•

DC-to-DC converters

•

Load switching

•

Power OR-ing

•

Server power supplies

•

Sync rectifier

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175 °C - - 40 V

drain current T

= 25 °C; V

= 10 V; Fig. 1 [1] - - 100 A

tot

total power dissipation T

= 25 °C; Fig. 2 - - 272 W

junction temperature -55 - 175 °C

Static characteristics

= 4.5 V; I

= 25 A; T

= 25 °C;

Fig. 12

- 1.8 2.1 mΩR

DSon

drain-source on-state

resistance

= 10 V; I

= 25 A; T

= 25 °C;

Fig. 12

- 1.5 1.8 mΩ

Dynamic characteristics

gate-drain charge V

= 4.5 V; I

= 25 A; V

= 20 V;

Fig. 15; Fig. 14

- 10.9 - nC

Summary of content (14 pages)

PAGE 1
PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High reliability Power SO8 package, qualified to 175°C • Optimised for 4.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 20 V; - 45 - nC Fig. 15; Fig. 14 [1] Continuous current is limited by package. 2. Pinning information Table 2.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaj881 103 IAL(A) 102 (1) 10 (2) 1 10-3 Fig. 3. 10-2 10-1 1 tAL(ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaj882 104 ID (A) 103 Limit RDSon = V DS / ID tp =10 µs 102 100 µs 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 Fig. 4.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaj883 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 P 0.02 10-2 tp T δ= single shot tp 10-3 Fig. 5. 10-6 10-5 10-4 10-3 10-2 t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit RG gate resistance f = 1 MHz 0.5 1 2 Ω ID = 25 A; VDS = 20 V; VGS = 10 V; - 96 - nC - 45 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 88 - nC Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 15; Fig. 14 QGS gate-source charge ID = 25 A; VDS = 20 V; VGS = 4.5 V; - 15.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology ID (A) 100 003aaj884 4.5 3 10 003aaj885 10 RDSon (mΩ) 2.6 80 7.5 60 2.4 5 40 20 0 Fig. 6. 2.5 VGS (V) = 2.2 0 0.5 1 1.5 VDS(V) 0 2 Output characteristics; drain current as a Fig. 7.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaj888 10-1 ID (A) 10 003aaj889 3 V GS(th) Max (1mA) (V) -2 ID = 5mA Min 10-3 Typ 2 Max 1mA 10-4 1 Min (5mA) 10-5 10-6 0 1 2 0 -60 3 V GS (V) Fig. 10. Sub-threshold drain current as a function of gate-source voltage 120 a 2.6 Tj (°C) 180 003aaj891 2 2.4 RDSon (mΩ) 8 60 Fig. 11.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 003aaj892 10 VGS (V) VDS ID 8 VGS(pl) 8V 6 32 V VGS(th) VGS 4 QGS1 VDS = 20 V QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 20 40 60 80 100 QG (nC) Fig. 15.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 003a a f 444 ID (A) trr ta tb 0 0.25 IR M IRM t (s ) Fig. 18. Reverse recovery timing definition PSMN1R8-40YLC Product data sheet All information provided in this document is subject to legal disclaimers. 22 August 2012 © NXP B.V. 2012.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 7. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 0 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PSMN1R8-40YLC NXP Semiconductors N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 9. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................