Datasheet

T
O
-
2
2
0
A
B
PSMN1R9-40PL
N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78
1 February 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design
and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
•
High efficiency due to low switching & conduction losses
•
Robust construction for demanding applications
•
Logic level gate
3. Applications
•
Battery-powered tools
•
Load switching
•
Motor control
•
Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 [1] - - 150 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 349 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
- 1.4 1.7 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge - 230 - nC
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V;
Fig. 13; Fig. 14
- 40.9 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 150 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
- - 801.1 mJ
[1] Continuous current is limited by package.