Datasheet

PSMN2R0-30PL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 June 2009 4 of 13
NXP Semiconductors
PSMN2R0-30PL
N-channel 30 V 2.1 mΩ logic level MOSFET
5. Thermal characteristics
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aad295
1
10
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100 ms
10 ms
1 ms
100 μs
10 μs
(1)
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 - 0.41 0.71 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aad247
10
-4
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th (j-mb)
(K/W)
single shot
0.02
0.05
0.1
0.2
δ
= 0.5
t
p
T
P
t
t
p
T
δ =