Datasheet

PSMN2R0-30PL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 24 June 2009 7 of 13
NXP Semiconductors
PSMN2R0-30PL
N-channel 30 V 2.1 mΩ logic level MOSFET
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
003aac982
0
1
2
3
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max
typ
min
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a
003aad250
0
1
2
3
4
5
0 20406080100
I
D
(A)
R
DSon
(m
Ω
)
V
GS
(V) =10 V
3.5
3
5
4