Datasheet

PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
4 October 2012 Product data sheet
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1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
•
High efficiency due to low switching and conduction losses
•
Suitable for standard level gate drive sources
1.3 Applications
•
DC-to-DC converters
•
Load switching
•
Motor control
•
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 60 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 [1] - - 120 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
[2] - 1.8 2.2 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 12; Fig. 13
- 3 3.5 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 32 45 nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 75 A; V
DS
= 30 V;
Fig. 14; Fig. 15
- 137 192 nC