Datasheet

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PSMN2R2-40PS
N-channel 40 V 2.1 mΩ standard level MOSFET
22 February 2013 Product data sheet
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1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
High efficiency due to low switching and conduction losses
•
Suitable for standard level gate drive sources
3. Applications
•
DC-to-DC convertors
•
Load switching
•
Motor control
•
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 3; Fig. 1 - - 100 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 306 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
[1] - 1.75 2.1 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 80 A; V
DS
= 20 V;
Fig. 14; Fig. 15
- 25 - nC
[1] Measured 3 mm from package.