Datasheet

1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Low parasitic inductance and
resistance
 Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
 Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
 DC-to-DC converters
 Load switching
 Synchronous buck regulator
1.4 Quick reference data
[1] Continuous current is limited by package.
PSMN2R8-25MLC
N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using
NextPower Technology
Rev. 3 — 15 June 2012 Product data sheet
LFPAK33
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
= 25°C --25V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[1]
--70A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --88W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 10
- 3.25 3.75 mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 10
- 2.45 2.8 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=4.5V; I
D
=25A; V
DS
=12.5V;
see Figure 12; see Figure 13
-3.9-nC
Q
G(tot)
total gate charge V
GS
=4.5V; I
D
=25A; V
DS
=12.5V;
see Figure 12
; see Figure 13
- 16.3 - nC