Datasheet

PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 20 March 2012 9 of 15
NXP Semiconductors
PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
T
j
(°C)
−60 180120060
003aae992
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a
003aad432
0
2
4
6
8
10
0 20 40 60 80 100
I
D
(A)
R
DSon
(m
Ω
)
10
5.5
6.5
6
8
20
V
GS
(V) = 5