Datasheet

PSMN2R9-30MLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 15 June 2012 2 of 14
NXP Semiconductors
PSMN2R9-30MLC
N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
2. Pinning information
3. Ordering information
4. Limiting values
[1] Continuous current is limited by package.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT1210 (LFPAK33)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to
drain
1432
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN2R9-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33);
4 leads
SOT1210
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
= 25 °C - 30 V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
=25°C; see Figure 1
[1]
-70A
V
GS
=10V; T
mb
= 100 °C; see Figure 1
[1]
-70A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C;
see Figure 4
- 523 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -91W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
V
ESD
electrostatic discharge voltage MM (JEDEC JESD22-A115) 340 - V
Source-drain diode
I
S
source current T
mb
=25°C - 70 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 523 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=70A;
V
sup
≤ 30 V; R
GS
=50Ω; unclamped;
see Figure 3
-75mJ