Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switch
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Rev. 1 — 31 October 2011 Product data sheet
I2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 80 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[1]
- - 120 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=100°C;
see Figure 12
-4.65.4mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
[2]
-2.83.3mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=75A; V
DS
=40V;
see Figure 14
; see Figure 15
-27-nC
Q
G(tot)
total gate charge - 139 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=120A;
V
sup
≤ 80 V; R
GS
=50Ω; unclamped
- - 676 mJ