Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN3R5-80PS,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

1.3 Applications

 DC-to-DC converters

 Load switch

 Motor control

 Server power supplies

1.4 Quick reference data

PSMN3R5-80PS

N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220

Rev. 03 — 19 April 2011 Product data sheet

TO-220AB

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 80 V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--120A

tot

total power dissipation T

= 25 °C; see Figure 2 --338W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=25A;

=100°C; see Figure 12

-55.8mΩ

=10V; I

=25A;

= 25 °C; see Figure 13

[2]

-33.5mΩ

Dynamic characteristics

gate-drain charge V

=10V; I

=75A;

= 40 V; see Figure 14;

see Figure 15

-27-nC

G(tot)

total gate charge - 139 - nC

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source

avalanche energy

=10V; T

j(init)

=25°C;

= 120 A; V

sup

≤ 80 V;

=50Ω; unclamped

--676mJ

Summary of content (15 pages)

PAGE 1
TO -22 0A B PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 03 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 [1] Continuous current is limited by package. [2] Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 003aaf614 103 ID (A) Limit RDSon = VDS / ID tp =10 μ s 10 2 100 μ s 10 DC 1 ms 10 ms 1 100 ms 10-1 10-1 Fig 3. 1 10 102 103 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 © NXP B.V. 2011. All rights reserved.
PAGE 5
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.22 0.44 K/W Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf613 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 P 0.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V - 63 - ns - 121 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 20 V [1] Measured 3 mm from package.
PAGE 8
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 003aad685 160 5.5 6 8 10 ID (A) 003aad280 5 5 VGS(th) (V) 4 max 120 3 typ 4.5 80 2 min 40 1 VGS (V) = 4 0 0 Fig 9. 0.5 1 1.5 VDS (V) 0 −60 2 Output characteristics: drain current as a function of drain-source voltage; typical values ID (A) 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 003aaf608 3 a min 10−2 typ max 2.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 003aaf612 15 RDSon (mΩ) 12.5 VDS ID VGS (V) = 4.5 10 VGS(pl) VGS(th) 7.5 VGS 5 QGS1 5.5 QGS 6.0 20.0 2.5 QGS2 QGD QG(tot) 003aaa508 0 0 10 20 30 ID (A) 40 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aaf609 10 VGS (V) Fig 14. Gate charge waveform definitions 003aaf610 105 C (pF) 40V 64V 104 7.5 Ciss VDS = 16V 103 5 Coss Crss 102 2.
PAGE 10
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 003aaf611 25 IS (A) 20 15 10 5 Tj = 175 °C Tj = 25 °C 0 0 0.25 0.5 0.75 VSD (V) 1 Fig 17. Source current as a function of source-drain voltage; typical values PSMN3R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 © NXP B.V. 2011. All rights reserved.
PAGE 11
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.
PAGE 12
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN3R5-80PS v.3 20110419 Product data sheet - PSMN3R5-80PS v.2 - PSMN3R5-80PS v.1 Modifications: PSMN3R5-80PS v.2 PSMN3R5-80PS Product data sheet • • Status changed from objective to product. Various changes to content.
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PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PAGE 15
PSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .