Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN4R3-80ES,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

1.3 Applications

 DC-to-DC converters

 Load switch

 Motor control

 Server power supplies

1.4 Quick reference data

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Rev. 02 — 18 April 2011 Product data sheet

I2PAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 80 V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

- - 120 A

tot

total power

dissipation

=25°C; see Figure 2 - - 306 W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source

on-state resistance

=10V; I

=25A;

= 25 °C; see Figure 13

[2]

-3.74.3mΩ

=10V; I

=25A;

=100°C; see Figure 12

[2]

-6.17.1mΩ

Dynamic characteristics

gate-drain charge V

=10V; I

=75A;

= 40 V; see Figure 14;

see Figure 15

-28-nC

G(tot)

total gate charge - 111 - nC

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=10V; T

j(init)

=25°C;

= 120 A; V

sup

≤ 80 V;

=50Ω; unclamped

- - 676 mJ

Summary of content (15 pages)

PAGE 1
I2P AK PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 02 — 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK [1] Continuous current is limited by package. [2] Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 003aaf676 103 Limit RDSon = VDS / ID ID (A) tp =10 μ s 102 100 μ s 10 1 ms DC 1 10 ms 100 ms 10-1 10-1 Fig 3. 1 10 102 103 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R3-80ES Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 © NXP B.V. 2011. All rights reserved.
PAGE 5
PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.22 0.49 K/W Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf629 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 δ= P 10-2 tp T 0.02 single shot t tp T 10-3 10-6 Fig 4.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V - 59 - ns - 109 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 20 V [1] Measured 3 mm from package.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 003aaf623 105 003aad280 5 VGS(th) (V) C (pF) 4 max Ciss 104 Crss 3 typ 2 min 103 1 102 10-1 Fig 9. 1 10 VGS (V) 0 −60 102 Input and reverse transfer capacitances as a function of gate-source voltage; typical values ID (A) 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 003aaf608 3 a min 10−2 typ max 2.4 10−3 1.8 10−4 1.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 003aaf628 18 4.4 VDS VGS (V) = 4.5 RDSon (mΩ) ID 12 VGS(pl) VGS(th) VGS 6 QGS1 6.0 QGS2 QGS 20.0 QGD QG(tot) 003aaa508 0 0 20 40 60 ID (A) 80 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aaf625 10 Fig 14. Gate charge waveform definitions 003aaf626 105 64V VGS (V) C (pF) 40V 7.5 VDS = 16V 104 Ciss 5 103 Coss 2.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 003aaf627 80 IS (A) 60 40 20 Tj = 175 °C Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values PSMN4R3-80ES Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 18 April 2011 © NXP B.V. 2011. All rights reserved.
PAGE 11
PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT226 A A1 E D1 mounting base D L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D max D1 E e L L1 Q mm 4.5 4.1 1.40 1.27 0.85 0.60 1.3 1.0 0.7 0.4 11 1.6 1.2 10.3 9.7 2.54 15.0 13.5 3.30 2.79 2.6 2.
PAGE 12
PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN4R3-80ES v.2 20110418 Product data sheet - PSMN4R3-80ES v.1 - - Modifications: PSMN4R3-80ES v.1 PSMN4R3-80ES Product data sheet • • Status changed from objective to product. Various changes to content.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PSMN4R3-80ES NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information .