Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN4R3-80PS,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

1.3 Applications

 DC-to-DC converters

 Load switch

 Motor control

 Server power supplies

1.4 Quick reference data

PSMN4R3-80PS

N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220

Rev. 03 — 18 April 2011 Product data sheet

TO-220AB

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

≥ 25 °C; T

≤ 175°C --80V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--120A

tot

total power

dissipation

= 25 °C; see Figure 2 --306W

junction

temperature

-55 - 175 °C

Static characteristics

DSon

drain-source

on-state resistance

=10V; I

=25A;

= 25 °C; see Figure 13

[2]

-3.74.3mΩ

=10V; I

=25A;

= 100 °C; see Figure 12

[2]

-6.17.1mΩ

Summary of content (15 pages)

PAGE 1
TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 03 — 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 - 28.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 003aaf676 103 Limit RDSon = VDS / ID ID (A) tp =10 μ s 102 100 μ s 10 1 ms DC 1 10 ms 100 ms 10-1 10-1 Fig 3. 1 10 102 103 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R3-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 © NXP B.V. 2011. All rights reserved.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.3 0.49 K/W Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf629 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 δ= P 10-2 tp T 0.02 single shot t tp T 10-3 10-6 Fig 4.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C Static characteristics V(BR)DSS drain-source breakdown voltage 80 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - - 1.2 V - 59 - ns - 109 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 20 V [1] Measured 3 mm from package.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 003aaf623 105 003aad280 5 VGS(th) (V) C (pF) 4 max Ciss 104 Crss 3 typ 2 min 103 1 102 10-1 Fig 9. 1 10 VGS (V) 0 −60 102 Input and reverse transfer capacitances as a function of gate-source voltage; typical values ID (A) 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 003aaf608 3 a min 10−2 typ max 2.4 10−3 1.8 10−4 1.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 003aaf628 18 4.4 VDS VGS (V) = 4.5 RDSon (mΩ) ID 12 VGS(pl) VGS(th) VGS 6 QGS1 6.0 QGS2 QGS 20.0 QGD QG(tot) 003aaa508 0 0 20 40 60 ID (A) 80 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aaf625 10 Fig 14. Gate charge waveform definitions 003aaf626 105 64V VGS (V) C (pF) 40V 7.5 VDS = 16V 104 Ciss 5 103 Coss 2.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 003aaf627 80 IS (A) 60 40 20 Tj = 175 °C Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values PSMN4R3-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 18 April 2011 © NXP B.V. 2011. All rights reserved.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN4R3-80PS v.3 20110418 Product data sheet - PSMN4R3-80PS v.2 - PSMN4R3-80PS v.1 Modifications: PSMN4R3-80PS v.2 PSMN4R3-80PS Product data sheet • • Status changed from objective to product. Various changes to content.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information .