Datasheet

PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
Rev. 01 — 18 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for standard level gate drive
sources
1.3 Applications
 DC - DC converters
 Load switch
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Measured 3 mm from package.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
; see Figure 3
- - 100 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 306 W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=80A;
V
DS
= 40 V; see Figure 14;
see Figure 15
-25-nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=15A;
T
j
= 25 °C; see Figure 6;
see Figure 13
[1] -3.34.1mΩ