Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN4R5-30YLC,115, MOSFET

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Low parasitic inductance and

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, QOSS for high

system efficiencies at low and high

loads

1.3 Applications

 DC-to-DC converters

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

PSMN4R5-30YLC

N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 3 — 5 July 2011 Product data sheet

LFPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175 °C - - 30 V

drain current T

=25°C; V

=10V;

see Figure 1

--84A

tot

total power dissipation T

=25°C; see Figure 2 --61W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

=20A;

=25°C; see Figure 12

-5.16.1mΩ

=10V; I

=20A;

=25°C; see Figure 12

-44.8mΩ

Summary of content (15 pages)

PAGE 1
LF PA K PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 5 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 - 2.85 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 - 9.6 - nC 2. Pinning information Table 2.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 003a a e 981 100 03na19 120 ID (A) Pder (%) 80 80 60 40 40 20 0 0 0 Fig 1. 50 100 0 150 200 Tmb (C) 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003a a f453 103 I AL (A) 102 (1) 10 (2) 1 10-1 10-3 Fig 3.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 003a a e 982 104 ID (A) 103 Limit R DS on = VDS / ID 102 tp =10  s 100  s DC 10 1 ms 10 ms 1 100 ms 10-1 10-1 Fig 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 1.05 1.54 1.95 V ID = 10 mA; VDS = VGS; Tj = 150 °C 0.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 17.2 - ns tr rise time VDS = 15 V; RL = 0.75 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω - 18.7 - ns td(off) turn-off delay time - 24.3 - ns tf fall time Qoss output charge - 8.75 - ns VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 7.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 003a a e 987 100 003a a e 989 80 ID (A) gfs (S ) 75 60 50 40 25 20 Tj = 150 C Tj = 25 C 0 0 0 Fig 8. 25 50 75 I D (A) 100 Forward transconductance as a function of drain current; typical values 003a a f399 10-1 Fig 9.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 003a a e 986 16 003a a f398 2 2.8 2.6 4.5V RDS on (m) a 12 1.5 3.0 VGS = 10V 8 1 4.5 3.5 4 0.5 VGS (V) =10V 0 0 10 20 30 I D (A) 0 -60 40 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 60 120 Tj ( C) 180 Fig 13.
PAGE 10
PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 003a a e 988 104 003a a e 991 80 IS (A) C (pF) 60 Cis s 103 40 Cos s 102 Crs s 20 Tj = 150 C 10 10-1 1 10 VDS (V) Tj = 25 C 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.4 0.8 VS D (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values 003a a f 444 ID (A) trr ta tb 0 0.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 8. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) C A1 θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN4R5-30YLC v.3 20110705 Product data sheet - PSMN4R5-30YLC v.2 - PSMN4R5-30YLC v.1 Modifications: PSMN4R5-30YLC v.2 PSMN4R5-30YLC Product data sheet • Various changes to content.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PAGE 15
PSMN4R5-30YLC NXP Semiconductors N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .