Datasheet
PSMN4R5-40PS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 June 2009 8 of 13
NXP Semiconductors
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Gate charge waveform definitions
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa27
0
0.5
1
1.5
2
−60 0 60 120 180
T
j
(
°
C)
a
003aaa50
8
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)