Datasheet

PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
30 November 2012 Product data sheet
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1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
•
High efficiency due to low switching and conduction losses
•
Improved dynamic avalanche performance
•
Suitable for standard level gate drive sources
1.3 Applications
•
DC-to-DC converters
•
Load switching
•
Motor control
•
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 [1] - - 100 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 306 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
- 4.3 5.6 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 43 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 80 A; V
DS
= 50 V;
Fig. 13; Fig. 14
- 141 - nC
Avalanche Ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped
- - 469 mJ