Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN6R5-80PS,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

[1] Continuous current rating is limited by package.

[2] Measured 3 mm from package.

PSMN6R5-80PS

N-channel 80 V 6.9 mΩ standard level MOSFET in TO220

Rev. 02 — 1 November 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 80 V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--100A

tot

total power dissipation T

= 25 °C; see Figure 2 --210W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=15A;

= 25 °C; see Figure 13

[2]

-5.96.9mΩ

Dynamic characteristics

gate-drain charge V

=10V; I

=25A;

= 40 V; see Figure 14;

see Figure 15

-16-nC

G(tot)

total gate charge - 71 - nC

Avalanche ruggedness

DS(AL)S

non-repetitive drain-source

avalanche energy

=10V; T

j(init)

=25°C;

=49A; V

sup

≤ 80 V;

=50Ω; unclamped

--700mJ

Summary of content (15 pages)

PAGE 1
PSMN6R5-80PS N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain Simplified outline Graphic symbol D mb 3 S source mb D mounting base; connected to drain G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad386 103 10 μs Limit RDSon = VDS / ID ID (A) 102 (1) 100 μs 10 DC 1 1 ms 10 ms 100 ms 10 -1 1 Fig 3. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 © NXP B.V. 2010. All rights reserved.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.4 0.7 K/W 003aad247 1 Zth (j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 0.02 δ= P tp T 10-3 single shot t tp 10-4 10-6 T 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 4.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 6. Characteristics Table 6. Characteristics Tested to JEDEC standards where applicable.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Table 6. Characteristics …continued Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time - 48 - ns Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 40 V - 82 - nC [1] Measured 3 mm from package. 003aad440 100 ID (A) 20 10 5.5 ID (A) 5 6 8 80 003aad442 100 80 60 60 40 40 VGS (V) = 4.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad448 20 03aa35 10−1 ID (A) RDSon (mΩ) min 10−2 typ max 16 10−3 12 10−4 8 10−5 10−6 4 4 Fig 9. 8 12 16 VGS (V) 20 003aae992 VGS(th) (V) 3 003aad045 2.5 2.0 typ 1.5 1.0 1 0.5 0 60 120 180 0.0 -60 -30 Tj (°C) Fig 11. Gate-source threshold voltage as a function of junction temperature Product data sheet 6 Fig 10.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad441 12 VDS VGS (V) = 5 RDSon (mΩ) ID 10 VGS(pl) 8 VGS(th) 5.5 VGS 6 QGS1 8 6 QGS2 QGS QGD QG(tot) 20 10 003aaa508 4 0 20 40 60 80 ID (A) 100 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aad444 10 VGS (V) 8 16 V Fig 14.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad443 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN6R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 © NXP B.V. 2010. All rights reserved.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN6R5-80PS v.2 20101101 Product data sheet - PSMN6R5-80PS v.1 - - Modifications: PSMN6R5-80PS v.1 PSMN6R5-80PS Product data sheet • • Status changed from objective to product. Various changes to content.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information .