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PSMN7R5-30YLD

N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56

using NextPowerS3 Technology

7 February 2014 Product data sheet

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1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

high efficiency, low spiking performance usually associated with MOSFETs with an

integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching

frequencies.

2. Features and benefits

•

Ultra low Q

, Q

and Q

OSS

for high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

•

Low spiking and ringing for low EMI designs

•

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at

25 °C

•

Optimised for 4.5 V gate drive

•

Low parasitic inductance and resistance

•

High reliability clip bonded and solder die attach Power SO8 package; no glue, no

wire bonds, qualified to 175 °C

•

Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

•

On-board DC-to-DC solutions for server and telecommunications

•

Secondary-side synchronous rectification in telecommunication applications

•

Voltage regulator modules (VRM)

•

Point-of-Load (POL) modules

•

Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

•

Brushed and brushless motor control

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175 °C - - 30 V

drain current T

= 25 °C; V

= 10 V; Fig. 2 - - 51 A

tot

total power dissipation T

= 25 °C; Fig. 1 - - 34 W

Summary of content (13 pages)

PAGE 1
LF PA K 56 PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
PAGE 2
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Tj junction temperature Conditions Min Typ Max Unit -55 - 175 °C - 8.1 10.2 mΩ - 6.1 7.5 mΩ - 1.7 - nC - 5.5 - nC - 1.3 - Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; Fig. 10 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 10 Dynamic characteristics QGD gate-drain charge VGS = 4.
PAGE 3
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig.
PAGE 4
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 03aa16 120 ID (A) Pder (%) aaa-008388 60 50 40 80 30 20 40 10 0 Fig. 1. ID (A) 0 50 100 150 Tmb (°C) 0 200 Normalized total power dissipation as a function of mounting base temperature Fig. 2.
PAGE 5
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient Fig. 5 - 50 - K/W Fig. 6 - 125 - K/W 003aag183 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 P 0.02 single shot tp 10-2 10-6 Fig. 4.
PAGE 6
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature 25 °C < Tj < 150 °C - -3.8 - mV/K IDSS drain leakage current VDS = 24 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 24 V; VGS = 0 V; Tj = 125 °C - 0.
PAGE 7
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; - 11 - nC Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.82 1.2 V trr reverse recovery time IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V; - 23 - ns Qr recovered charge VDS = 15 V; Fig.
PAGE 8
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology ID (A) aaa-008392 50 aaa-008393 50 RDSon (mΩ) 40 40 30 30 20 20 2.8 V 3V 3.5 V 10 150°C Tj = 25°C 4.5 V 10 10 V 0 Fig. 9. 0 1 2 3 4 VGS (V) 0 5 Transfer characteristics; drain current as a function of gate-source voltage; typical values 10 20 30 40 ID (A) 50 Fig. 10.
PAGE 9
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology VGS (V) aaa-008394 10 aaa-008395 104 C (pF) 8 103 6 Ciss 24 V Coss 15 V 4 VDS = 6 V 102 Crss 2 0 0 2 4 6 8 10 QG (nC) 10 10-1 12 Fig. 13. Gate-source voltage as a function of gate charge; typical values IS (A) 1 10 VDS (V) Fig. 14.
PAGE 10
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) mm A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.
PAGE 11
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.
PAGE 12
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PAGE 13
PSMN7R5-30YLD NXP Semiconductors N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ...............................................