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PSMN7R6-100BSE

N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK

18 December 2012 Product data sheet

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1. General description

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of

NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-

swap" controllers - robust enough to withstand substantial inrush currents during turn on,

whilst offering a low R

DS(on)

characteristic to keep temperatures down and efficiency up in

continued use. Ideal for telecommunication systems based on a 48 V backplane / supply

rail.

2. Features and benefits

•

Enhanced forward biased safe operating area for superior linear mode operation

•

Very low R

DS(on)

for low conduction losses

3. Applications

•

Electronic fuse

•

Hot swap

•

Load switch

•

Soft start

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 100 V

drain current T

= 100 °C; V

= 10 V; Fig. 1 [1] - - 75 A

tot

total power dissipation T

= 25 °C; Fig. 2 - - 296 W

Static characteristics

DSon

drain-source on-state

resistance

= 10 V; I

= 25 A; T

= 25 °C;

Fig. 12

- 6.5 7.6 mΩ

Dynamic characteristics

gate-drain charge - 41 - nC

G(tot)

total gate charge

= 10 V; I

= 25 A; V

= 50 V;

Fig. 14; Fig. 15

- 128 - nC

Summary of content (13 pages)

PAGE 1
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use.
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PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; - - 426 mJ Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 Continuous current limited by package 5. Pinning information Table 2.
PAGE 3
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions VGS gate-source voltage ID drain current Min Max Unit -20 20 V VGS = 10 V; Tj = 25 °C; Fig. 1 [1] - 75 A VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 75 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 481 A Ptot total power dissipation Tmb = 25 °C; Fig.
PAGE 4
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK IAL (A) 003aak745 102 (1) (2) 10 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time ID (A) 003aak746 103 Limit RDSon = VDS / ID tp = 10 us 102 100 us 10 DC 1 ms 10 ms 100 ms 1 10-1 Fig. 4. 1 102 10 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9.
PAGE 5
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 003aak747 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 0.02 P single shot δ= tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 tp T t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7.
PAGE 6
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit ID = 25 A; VDS = 50 V; VGS = 10 V; - 128 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 110 - nC gate-source charge ID = 25 A; VDS = 50 V; VGS = 10 V; - 33 - nC QGD gate-drain charge Fig. 14; Fig. 15 - 41 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 5.
PAGE 7
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 003aak750 80 gfs (S) 003aak751 200 ID (A) 160 60 120 40 80 20 0 Fig. 8. 40 0 16 32 48 64 ID (A) 0 80 Forward transconductance as a function of drain current; typical values Fig. 9. 03aa35 10- 1 ID (A) min 10- 2 typ max 10- 5 1 VGS (V) 0 - 60 6 Fig. 10.
PAGE 8
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 003aak752 20 RDSon 5V 5.5 V 6V 003aak756 3 a 2.4 16 1.8 12 1.2 6.5 V 8 4 0.6 0 20 40 60 7V 8V 80 100 ID (A) 10 V Fig. 12. Drain-source on-state resistance as a function of drain current; typical values VDS 0 -60 120 -30 0 30 60 90 120 150 Tj (°C) 180 Fig. 13.
PAGE 9
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 003aak754 104 C (pF) Ciss 003aak755 120 IS (A) 100 80 103 60 Coss Crss 102 10-1 1 10 VDS (V) 40 Tj = 175°C 20 102 0 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) 1.2 Fig. 16. Input, output and reverse transfer capacitances Fig. 17.
PAGE 10
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 11. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 1 Lp 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 11
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.
PAGE 12
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PAGE 13
PSMN7R6-100BSE NXP Semiconductors N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............