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PSMN8R0-40PS

N-channel 40 V 7.6 mΩ standard level MOSFET

Rev. 02 — 25 June 2009 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

sources

1.3 Applications

 DC-to-DC convertors

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

[1] Measured 3 mm from package.

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 40 V

drain current T

=25°C; V

=10V;

see Figure 1

--77A

tot

total power

dissipation

= 25 °C; see Figure 2 --86W

Dynamic characteristics

gate-drain charge V

=10V; I

=25A;

= 20 V; see Figure 14;

see Figure 15

-3.8-nC

Static characteristics

DSon

drain-source

on-state resistance

=10V; I

=25A;

= 25 °C; see Figure 13

[1] -6.27.6mΩ

Summary of content (14 pages)

PAGE 1
PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 003aad298 103 10 μs ID (A) Limit RDSon = VDS / ID 102 100 μs 10 DC 1 ms 10 ms 100 ms 1 10-1 Fig 3. 1 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN8R0-40PS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 1.2 1.74 K/W 003aad068 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 10-1 0.02 10-2 δ= P 10-3 tp T single shot t tp T 10-4 10-6 Fig 4.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11; see Figure 12 - - 4.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.85 1.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 003aad060 100 ID (A) 003aad064 2000 C (pF) Ciss 80 1500 60 Crss 1000 40 500 20 25 °C Tj = 175 °C 0 0 0 Fig 7. 2 4 6 VGS (V) 8 Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad065 50 gfs (S) Fig 8.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 03aa35 10−1 ID (A) 003aad280 5 VGS(th) (V) min 10−2 typ max 4 10−3 3 10−4 2 10−5 1 10−6 0 2 4 6 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage max typ min 0 −60 0 60 120 180 Tj (°C) Fig 12. Gate-source threshold voltage as a function of junction temperature 03aa27 2 VDS a ID 1.5 VGS(pl) VGS(th) 1 VGS QGS1 0.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 003aad062 10 VGS (V) 8 003aad063 104 C (pF) VDS = 20 V 6 Ciss 103 4 Coss 2 Crss 102 10-1 0 0 5 10 15 20 25 QG (nC) Fig 15. Gate-source voltage as a function of gate charge; typical values 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad061 100 IS (A) 80 60 40 175 °C 20 Tj = 25 °C 0 0 0.3 0.6 0.9 V (V) 1.2 SD Fig 17.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN8R0-40PS_2 20090625 Product data sheet - PSMN8R0-40PS_1 Modifications: PSMN8R0-40PS_1 • Status changed from objective to product 20090511 Objective data sheet - PSMN8R0-40PS_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PSMN8R0-40PS NXP Semiconductors N-channel 40 V 7.6 mΩ standard level MOSFET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . .