Datasheet

PSMN8R3-40YS
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET
Rev. 01 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Advanced TrenchMOS provides low
RDSon and low gate charge
 High efficiency gains in switching
power converters
 Improved mechanical and thermal
characteristics
 LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
 DC-to-DC convertors
 Lithium-ion battery protection
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 40 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
--70A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --74W
T
j
junction temperature -55 - 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=62A; V
sup
≤ 40 V;
unclamped; R
GS
=50Ω
--33mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
= 20 V; see Figure 14;
see Figure 15
-4.5-nC
Q
G(tot)
total gate charge - 20 - nC