Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN8R7-80PS,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

and conduction losses

 Suitable for standard level gate drive

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

[1] Measured 3 mm from package.

PSMN8R7-80PS

N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220

Rev. 02 — 1 November 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175°C --80V

drain current T

=25°C; V

=10V;

see Figure 1

--90A

tot

total power dissipation T

= 25 °C; see Figure 2 --170W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=10A;

= 100 °C; see Figure 12

--14mΩ

=10V; I

=10A;

=25°C; see Figure 13

[1]

-7.58.7mΩ

Dynamic characteristics

gate-drain charge V

=10V; I

=25A;

=40V; see Figure 14;

see Figure 15

-11-nC

G(tot)

total gate charge - 52 - nC

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source avalanche

energy

=10V; T

j(init)

=25°C;

=90A; V

sup

≤ 80 V;

=50Ω; unclamped

--120mJ

Summary of content (15 pages)

PAGE 1
PSMN8R7-80PS N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain Simplified outline Graphic symbol D mb 3 S source mb D mounting base; connected to drain G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 003aad387 103 ID (A) 10 μs Limit RDSon = VDS / ID 102 100 μs 10 DC 1 1 ms 10 ms 100 ms 10-1 1 Fig 3. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN8R7-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 © NXP B.V. 2010. All rights reserved.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.54 0.88 K/W 003aad355 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 δ= P tp T 10-3 single shot t tp T 10-4 Fig 4.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 6. Characteristics Table 6. Characteristics Tested to JEDEC standards where applicable.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Table 6. Characteristics …continued Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time - 42 - ns Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 40 V - 66 - nC [1] Measured 3 mm from package. 003aad449 100 20 ID (A) 5.5 5 8 80 003aad451 100 ID (A) 80 6 60 60 40 40 4.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 003aad457 25 003aae992 5 VGS(th) (V) RDSon (mΩ) 4 max 20 3 typ 15 min 2 10 1 5 4 Fig 9. 8 12 16 VGS (V) 0 −60 20 Drain-source on-state resistance as a function of gate-source voltage; typical values ID (A) 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 003aae090 3 a min 10−2 typ max 2.4 10−3 1.8 10−4 1.2 10−5 0.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 003aad450 20 4.5 RDSon (mΩ) 17 VDS VGS (V) = 5 ID VGS(pl) 14 5.5 VGS(th) 6 11 VGS QGS1 8 QGS2 QGS 8 20 QGD QG(tot) 10 003aaa508 5 0 20 40 60 80 ID (A) 100 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aad453 10 VGS (V) 8 Fig 14.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 003aad452 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN8R7-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 © NXP B.V. 2010. All rights reserved.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN8R7-80PS v.2 20101101 Product data sheet - PSMN8R7-80PS v.1 - - Modifications: PSMN8R7-80PS v.1 PSMN8R7-80PS Product data sheet • • Status changed from objective to product. Various changes to content.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PSMN8R7-80PS NXP Semiconductors N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information .