Datasheet
PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 2 March 2012 2 of 14
NXP Semiconductors
PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
2. Pinning information
[1] It is not possible to make connection to pin 2.
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT404 (D2PAK)
2 D drain
[1]
3Ssource
mb D mounting base;
connected to drain
mb
13
2
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN9R5-100BS D2PAK plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage T
j
≤ 175 °C; T
j
≥ 25 °C; R
GS
=20kΩ - 100 V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 -63A
V
GS
=10V; T
mb
=25°C; see Figure 1 -89A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C;
see Figure 3
- 355 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -211W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode
I
S
source current T
mb
=25°C - 89 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 355 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=89A;
V
sup
≤ 100 V; unclamped; R
GS
=50Ω
- 177 mJ