Datasheet

PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 2 March 2012 3 of 14
NXP Semiconductors
PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aae016
0
20
40
60
80
100
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
003aae017
10
−1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100 ms
10 ms
1 ms
t
p
= 10 μs
100 μs