Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product profile

1.1 General description

PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic

packages.

1.2 Features and benefits

1.3 Applications

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

1.4 Quick reference data

PEMB10; PUMB10

PNP/PNP resistor-equipped transistors;

R1 = 2.2 k, R2 = 47 k

Rev. 3 — 3 January 2012 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement

NPN/NPN

complement

Package

configuration

NXP JEITA

PEMB10 SOT666 - PEMD10 PEMH10 ultra small and flat lead

PUMB10 SOT363 SC-88 PUMD10 PUMH10 very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 1.54 2.20 2.86 k

R2/R1 bias resistor ratio 17 21 26

Summary of content (15 pages)

PAGE 1
PEMB10; PUMB10 PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 3 — 3 January 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PEMB10 SOT666 PUMB10 SOT363 JEITA NPN/PNP complement NPN/NPN complement Package configuration - PEMD10 PEMH10 ultra small and flat lead SC-88 PUMD10 PUMH10 very small 1.
PAGE 2
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Graphic symbol 6 5 4 R1 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 006aaa212 3. Ordering information Table 4.
PAGE 3
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) SOT363 and SOT666; FR4 PCB, standard footprint Fig 1. Per device: Power derating curve 6. Thermal characteristics Table 7.
PAGE 5
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PEMB10 (SOT666); typical values 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.
PAGE 6
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
PAGE 7
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac814 103 006aac815 -1 (1) hFE (2) VCEsat (V) (3) 102 -10-1 (1) 10 (2) (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 -1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. -102 -10 IC (mA) DC current gain as a function of collector current; typical values Fig 5.
PAGE 8
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac818 9 Cc (pF) 006aac763 103 fT (MHz) 6 102 3 10 -10-1 0 0 -10 -20 -30 -40 -50 VCB (V) -102 -10 IC (mA) f = 1 MHz; Tamb = 25 C Fig 8. -1 VCE = 5 V; Tamb = 25 C Collector capacitance as a function of collector-base voltage; typical values Fig 9. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.
PAGE 9
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 9. Package outline 1.7 1.5 0.6 0.5 6 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.18 0.08 0.27 0.17 0.5 1 Dimensions in mm 04-11-08 Fig 10. Package outline PEMB10 (SOT666) 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 11.
PAGE 10
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 13. Reflow soldering footprint PUMB10 (SOT363/SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 14.
PAGE 12
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMB10_ PUMB10 v.3 20120103 Product data sheet - PEMB10_ PUMB10 v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
PAGE 13
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.
PAGE 15
PEMB10; PUMB10 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . .