Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product profile

1.1 General description

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMB13; PUMB13

PNP/PNP resistor-equipped transistors;

R1 = 4.7 k, R2 = 47 k

Rev. 4 — 7 December 2011 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement

NPN/NPN

complement

Package

configuration

NXP JEITA

PEMB13 SOT666 - PEMD13 PEMH13 ultra small and flat lead

PUMB13 SOT363 SC-88 PUMD13 PUMH13 very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 3.3 4.7 6.1 k

R2/R1 bias resistor ratio 8 10 12

Summary of content (14 pages)

PAGE 1
PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Rev. 4 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PEMB13 SOT666 PUMB13 SOT363 JEITA NPN/PNP complement NPN/NPN complement Package configuration - PEMD13 PEMH13 ultra small and flat lead SC-88 PUMD13 PUMH13 very small 1.
PAGE 2
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Graphic symbol 6 5 4 R1 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 006aaa212 3. Ordering information Table 4.
PAGE 3
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666 6. Thermal characteristics Table 7.
PAGE 5
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMB13 (SOT666); typical values 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.
PAGE 6
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
PAGE 7
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 006aac824 103 hFE 006aac825 -1 (1) VCEsat (V) (2) (3) 102 -10-1 (1) 10 (2) (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 -1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. -102 -10 IC (mA) DC current gain as a function of collector current; typical values Fig 5.
PAGE 8
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 006aac828 8 006aac763 103 Cc (pF) fT (MHz) 6 102 4 2 0 0 -10 -20 -30 10 -10-1 -40 -50 VCB (V) -102 -10 IC (mA) f = 1 MHz; Tamb = 25 C Fig 8. -1 VCE = 5 V; Tamb = 25 C Collector capacitance as a function of collector-base voltage; typical values Fig 9. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.
PAGE 9
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 13. Reflow soldering footprint PUMB13 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 14.
PAGE 11
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMB13_PUMB13 v.4 20111207 Product data sheet - PEMB13_PUMB13 v.3 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
PAGE 12
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 13
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.
PAGE 14
PEMB13; PUMB13 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . .