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1. Product profile

1.1 General description

NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMD2; PIMD2; PUMD2

NPN/PNP resistor-equipped transistors;

R1 = 22 k, R2 = 22 k

Rev. 8 — 14 November 2013 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP

complement

NPN/NPN

complement

Package

configuration

NXP JEITA

PEMD2 SOT666 - PEMB1 PEMH1 ultra small and flat lead

PIMD2 SOT457 SC-74 - - small

PUMD2 SOT363 SC-88 PUMB1 PUMH1 very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Summary of content (18 pages)

PAGE 1
PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k Rev. 8 — 14 November 2013 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2. Pinning information Table 3.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac766 500 Ptot (mW) (1) 400 (2) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT457; FR4 PCB, standard footprint (2) SOT363 and SOT666; FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 7.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMD2 (SOT666); typical values 006aac767 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac794 103 hFE 006aac795 1 (1) VCEsat (V) (2) (3) 102 10-1 (1) (2) (3) 10 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 6.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac798 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 0 0 10 20 30 40 50 VCB (V) 10 10-1 102 10 IC (mA) f = 1 MHz; Tamb = 25 C Fig 9. 1 VCE = 5 V; Tamb = 25 C TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values 006aac800 103 Fig 10.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac802 -10 (1) VI(on) (V) 006aac803 -10 VI(off) (V) (2) (3) (1) (2) -1 -1 -10-1 -10-1 -1 -102 -10 (3) -10-1 -10-1 -1 IC (mA) -10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 13.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 1.5 6 3.1 2.7 0.6 0.5 5 6 4 1.1 0.9 5 4 2 3 0.6 0.2 0.3 0.1 1.7 1.5 3.0 2.5 1.3 1.1 1.7 1.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 20. Reflow soldering footprint PIMD2 (SOT457) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 22. Reflow soldering footprint PUMD2 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 23.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 24. Reflow soldering footprint PEMD2 (SOT666) PEMD2_PIMD2_PUMD2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMD2_PIMD2_PUMD2 v.8 20131114 Product data sheet - Modifications: • • • • • • • • • PEMD2_PIMD2_PUMD2 v.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only.
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PEMD2; PIMD2; PUMD2 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . .