Datasheet

PEMD48_PUMD48 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 24 January 2012 5 of 16
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PUMD48 (SOT363); typical values
006aac750
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
 25 C
PEMD48 (SOT666)
[1][2]
- - 625 K/W
PUMD48 (SOT363)
[1]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
 25 C
PEMD48 (SOT666)
[1][2]
- - 417 K/W
PUMD48 (SOT363)
[1]
- - 417 K/W