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1. Product profile

1.1 General description

NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMH9; PIMH9; PUMH9

NPN/NPN resistor-equipped transistors;

R1 = 10 k, R2 = 47 k

Rev. 5 — 12 November 2013 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP

complement

NPN/PNP

complement

Package

configuration

NXP JEITA

PEMH9 SOT666 - PEMB9 PEMD9 ultra small and flat lead

PIMH9 SOT457 SC-74 - - small

PUMH9 SOT363 SC-88 PUMB9 PUMD9 very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 7 10 13 k

R2/R1 bias resistor ratio 3.7 4.7 5.7

Summary of content (17 pages)

PAGE 1
PEMH9; PIMH9; PUMH9 NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 Graphic symbol 6 4 5 R1 4 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 sym063 3. Ordering information Table 4.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac766 500 Ptot (mW) (1) 400 (2) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT457; FR4 PCB, standard footprint (2) SOT363 and SOT666; FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 7.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMH9 (SOT666); typical values 006aac767 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac784 103 006aac785 1 (1) hFE (2) VCEsat (V) (3) 102 (1) 10-1 (2) (3) 10 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 5. DC current gain as a function of collector current; typical values Fig 6.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac788 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 0 0 10 20 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C Fig 9. 10 10-1 1 102 10 IC (mA) VCE = 5 V; Tamb = 25 C Collector capacitance as a function of collector-base voltage; typical values Fig 10. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 9. Package outline 1.7 1.5 6 3.1 2.7 0.6 0.5 5 6 4 1.1 0.9 5 4 2 3 0.6 0.2 0.3 0.1 1.7 1.5 3.0 2.5 1.3 1.1 1.7 1.3 pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 pin 1 index 0.40 0.25 0.95 1 0.26 0.10 1.9 Dimensions in mm Dimensions in mm 04-11-08 Fig 11. Package outline PEMH9 (SOT666) 04-11-08 Fig 12. Package outline PIMH9 (SOT457) 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 14. Reflow soldering footprint PIMH9 (SOT457) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 16. Reflow soldering footprint PUMH9 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 17.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 18. Reflow soldering footprint PEMH9 (SOT666) PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMH9_PIMH9_PUMH9 v.5 20131112 Product data sheet - PIMH9_PUMH9_PEMH9 v.4 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only.
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PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . .