Datasheet

Appendix A Electrical Characteristics
MC9S08SG8 MCU Series Data Sheet, Rev. 8
Freescale Semiconductor 311
A.13 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. FLASH Characteristics
Nu
m
C Characteristic Symbol Min Typical Max Unit
Temp Rated
1
1
Electrical characteristics only apply to the temperature rated devices marked with x.
Stand
ard
AEC
Grade
0
1—
Supply voltage for
program/erase
V
prog/erase
2.7 5.5
Vxx
2—
Supply voltage for read
operation
V
Read
2.7 5.5
Vxx
3 — Internal FCLK frequency
2
2
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz x x
 — Internal FCLK period (1/f
FCLK
)t
Fcyc
56.67sx x
5—
Byte program time (random
location)
3
3
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
prog
9t
Fcyc
xx
6—
Byte program time (burst
mode)
2
t
Burst
4t
Fcyc
xx
7 — Page erase time
2
t
Page
4000 t
Fcyc
xx
8 — Mass erase time
2
t
Mass
20,000 t
Fcyc
xx
9C
Program/erase endurance
4
T
L
to T
H
= –40C to +125C
T
L
to T
H
= –40C to +150C
T = 25C
4
Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
n
FLPE
10,000
10,000
10,000
—
—
100,000
—
—
—
cycles x
—
x
—
x
x
10 C Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years x x