Datasheet

192 KByte Flash Module (S12FTMRG192K2V1)
MC9S12G Family Reference Manual, Rev.1.23
1132 Freescale Semiconductor
30.4.6.15 Program EEPROM Command
The Program EEPROM operation programs one to four previously erased words in the EEPROM block.
The Program EEPROM operation will confirm that the targeted location(s) were successfully programmed
upon completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Upon clearing CCIF to launch the Program EEPROM command, the user-supplied words will be
transferred to the Memory Controller and be programmed if the area is unprotected. The CCOBIX index
value at Program EEPROM command launch determines how many words will be programmed in the
EEPROM block. The CCIF flag is set when the operation has completed.
30.4.6.16 Erase EEPROM Sector Command
The Erase EEPROM Sector operation will erase all addresses in a sector of the EEPROM block.
Table 30-62. Program EEPROM Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x11
Global address [17:16] to
identify the EEPROM block
001 Global address [15:0] of word to be programmed
010 Word 0 program value
011 Word 1 program value, if desired
100 Word 2 program value, if desired
101 Word 3 program value, if desired
Table 30-63. Program EEPROM Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] < 010 at command launch
Set if CCOBIX[2:0] > 101 at command launch
Set if command not available in current mode (see Table 30-27)
Set if an invalid global address [17:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested group of words breaches the end of the EEPROM block
FPVIOL Set if the selected area of the EEPROM memory is protected
MGSTAT1 Set if any errors have been encountered during the verify operation
MGSTAT0
Set if any non-correctable errors have been encountered during the verify
operation