Datasheet

Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor 1195
A.1.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M, W) with
regards to the ambient temperature T
A
and the junction temperature T
J
.For
power dissipation calculations refer to Section A.1.8, “Power Dissipation
and Thermal Characteristics”.
Table A-2. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body
Series Resistance R1 1500 Ω
Storage Capacitance C 100 pF
Number of Pulse per pin
positive
negative
-
-
3
3
Table A-3. ESD and Latch-Up Protection Characteristics
Num C Rating Symbol Min Max Unit
1C
Human Body Model (HBM) V
HBM
2000 - V
2C
Charge Device Model (CDM) V
CDM
500 - V
3C
Charge Device Model (CDM) (Corner Pins) V
CDM
750 - V
Table A-4. Operating Conditions
Rating Symbol Min Typ Max Unit
I/O, regulator and analog supply voltage V
DD35
3.13 5 5.5 V
Oscillator f
osc
4 — 16 MHz
Bus frequency f
bus
0.5 — 25 MHz
Temperature Option C
Operating ambient temperature range
1
Operating junction temperature range
T
A
T
J
–40
–40
27
—
85
105
°C
Temperature Option V
Operating ambient temperature range
1
Operating junction temperature range
T
A
T
J
–40
–40
27
—
105
105
°C
Temperature Option M
Operating ambient temperature range
1
Operating junction temperature range
T
A
T
J
–40
–40
27
—
125
150
°C
Temperature Option W
Operating ambient temperature range
1
Operating junction temperature range
T
A
T
J
–40
–40
27
—
150
160
°C