Datasheet

Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor 1227
FTMRG64K1, FTMRG48K1:
FTMRG32K1, FTMRG16K1:
Assuming that no non-blank location is found, then the time to erase verify a EEPROM block is given by:
FTMRG240K2, FTMRG192K2:
FTMRG128K1, FTMRG96K1:
FTMRG64K1, FTMRG48K1:
FTMRG32K1, FTMRG16K1:
A.7.1.3 Erase Verify P-Flash Section (FCMD=0x03)
The maximum time to erase verify a section of P-Flash depends on the number of phrases being verified
(N
VP
) and is given by:
A.7.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by:
t
pcheck
16700
1
f
NVMBUS
---------------------
⋅=
t
pcheck
33400
1
f
NVMBUS
---------------------
⋅=
t
dcheck
2620
1
f
NVMBUS
---------------------
⋅=
t
dcheck
2620
1
f
NVMBUS
---------------------
⋅=
t
dcheck
1540
1
f
NVMBUS
---------------------
⋅=
t
dcheck
2620
1
f
NVMBUS
---------------------
⋅=
t 550 N
VP
+()
1
f
NVMBUS
---------------------
⋅≈
t 550
1
f
NVMBUS
---------------------
⋅=