Datasheet

Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor 1231
A.7.1.15 Program EEPROM (FCMD=0x11)
EEPROM programming time is dependent on the number of words being programmed and their location
with respect to a row boundary since programming across a row boundary requires extra steps.
The typical EEPROM programming time is given by the following equation, where N
W
denotes the
number of words:
The maximum EEPROM programming time is given by:
A.7.1.16 Erase EEPROM Sector (FCMD=0x12)
Typical EEPROM sector erase times, expected on a new device where no margin verify fails occur, is given
by:
Maximum EEPROM sector erase times is given by:
The EEPROM sector erase time is ~5ms on a new device and can extend to ~20ms as the flash is cycled.
t
dpgm
34 N
W
⋅()
1
f
NVMOP
------------------
⋅
⎝
⎛
⎠
⎞
600 940 N
W
⋅()+()
1
f
NVMBUS
---------------------
⋅
⎝
⎛
⎠
⎞
+≈
t
dpgm
34 N
W
⋅()
1
f
NVMOP
------------------
⋅
⎝
⎛
⎠
⎞
600 1020( N
W
)⋅+()
1
f
NVMBUS
---------------------
⋅
⎝
⎛
⎠
⎞
+≈
t
dera
5025
1
f
NVMOP
------------------
710
1
f
NVMBUS
---------------------
⋅+⋅≈
t
dera
20400
1
f
NVMOP
------------------
750
1
f
NVMBUS
---------------------
⋅+⋅≈