Datasheet

Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor 1233
A.7.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
8 D P-Flash sector erase time t
pera
—2026ms
9 D P-Flash phrase programming time t
ppgm
— 185 200 µs
10 D EEPROM sector erase time t
dera
—5
4
26 ms
11 D EEPROM erase verify (blank check) time
(FTMRG240K2, TMRG192K2)
t
dcheck
— — 2620 t
cyc
EEPROM erase verify (blank check) time
(FTMRG128K1, FTMRG96K1)
t
dcheck
— — 2620 t
cyc
EEPROM erase verify (blank check) time
(FTMRG64K1, FTMRG48K1)
t
dcheck
— — 1540 t
cyc
EEPROM erase verify (blank check) time
(FTMRG32K1, FTMRG16K1)
t
dcheck
— — 1030 t
cyc
12a D EEPROM one word programming time t
dpgm1
— 97 106 µs
12b D EEPROM two word programming time t
dpgm2
— 140 154 µs
1
Typical program and erase times are based on typical f
NVMOP
and maximum f
NVMBUS
2
Maximum program and erase times are based on minimum f
NVMOP
and maximum f
NVMBUS
3
t
cyc
= 1 / f
NVMBUS
4
Typical value for a new device
Num C Rating Symbol Min Typ
1
Max
2
Unit
3