Datasheet

Electrical Characteristics
MC9S12G Family Reference Manual, Rev.1.23
1234 Freescale Semiconductor
A.8 Phase Locked Loop
A.8.1 Jitter Definitions
With each transition of the feedback clock, the deviation from the reference clock is measured and input
voltage to the VCO is adjusted accordingly.The adjustment is done continuously with no abrupt changes
in the VCOCLK frequency. Noise, voltage, temperature and other factors cause slight variations in the
control loop resulting in a clock jitter. This jitter affects the real minimum and maximum clock periods as
illustrated in Figure A-4.
Table A-35. NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
NUM C Rating Symbol Min Typ Max Unit
Program Flash Arrays
1 C Data retention at an average junction temperature of T
Javg
= 85°C
1
after up to 10,000 program/erase cycles
1
T
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive application.
t
NVMRET
20 100
2
2
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer to
Engineering Bulletin EB618
— Years
2 C Program Flash number of program/erase cycles
(-40°C ≤ Tj ≤ 150°C)
n
FLPE
10K 100K
3
3
Spec table quotes typical endurance evaluated at 25°C for this product family. For additional information on how Freescale defines
Typical Endurance, please refer to Engineering Bulletin EB619.
— Cycles
EEPROM Array
3 C Data retention at an average junction temperature of T
Javg
= 85°C
1
after up to 100,000 program/erase cycles
t
NVMRET
5 100
2
— Years
4 C Data retention at an average junction temperature of T
Javg
= 85°C
1
after up to 10,000 program/erase cycles
t
NVMRET
10 100
2
— Years
5 C Data retention at an average junction temperature of T
Javg
= 85°C
1
after less than 100 program/erase cycles
t
NVMRET
20 100
2
— Years
6 C EEPROM number of program/erase cycles (-40°C ≤ Tj ≤ 150°C) n
FLPE
100K 500K
3
— Cycles