Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) Class AB HVSON 8 (4x4)

1. General description

The SA58631 is a one channel audio ampliﬁer in an HVSON8 package. It provides power

output of 3 W with an 8 Ω load at 9 V supply. The internal circuit is comprised of a BTL

(Bridge Tied Load) ampliﬁer with a complementary PNP-NPN output stage and

standby/mute logic. The SA58631 is housed in an 8-pin HVSON package which has an

exposed die attach paddle enabling reduced thermal resistance and increased power

dissipation.

2. Features

n Low junction-to-ambient thermal resistance using exposed die attach paddle

n Gain can be ﬁxed with external resistors from 6 dB to 30 dB

n Standby mode controlled by CMOS-compatible levels

n Low standby current < 10 µA

n No switch-on/switch-off plops

n High power supply ripple rejection: 50 dB minimum

n ElectroStatic Discharge (ESD) protection

n Output short circuit to ground protection

n Thermal shutdown protection

3. Applications

n Professional and amateur mobile radio

n Portable consumer products: toys and games

n Personal computer remote speakers

SA58631

3 W BTL audio ampliﬁer

Rev. 02 — 12 October 2007 Product data sheet

Summary of content (21 pages)

PAGE 1
SA58631 3 W BTL audio amplifier Rev. 02 — 12 October 2007 Product data sheet 1. General description The SA58631 is a one channel audio amplifier in an HVSON8 package. It provides power output of 3 W with an 8 Ω load at 9 V supply. The internal circuit is comprised of a BTL (Bridge Tied Load) amplifier with a complementary PNP-NPN output stage and standby/mute logic.
PAGE 2
SA58631 NXP Semiconductors 3 W BTL audio amplifier 4. Quick reference data Table 1. Quick reference data VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage operating Iq quiescent current RL = ∞ Ω Istb standby current Po output power THD+N PSRR Min Typ Max Unit 2.2 9 18 V - 8 12 mA VMODE = VCC - - 10 µA THD+N = 10 % 1 1.2 - W [1] THD+N = 0.5 % 0.6 0.
PAGE 3
SA58631 NXP Semiconductors 3 W BTL audio amplifier 6. Block diagram SA58631 IN− IN+ 4 3 VCC 6 5 R R 20 kΩ SVR OUT− 8 OUT+ 2 20 kΩ MODE 1 STANDBY/MUTE LOGIC 7 GND 002aac005 Fig 1. Block diagram of SA58631 7. Pinning information 7.1 Pinning terminal 1 index area MODE 1 SVR 2 8 OUT+ 7 GND SA58631TK IN+ 3 6 VCC IN− 4 5 OUT− 002aac006 Transparent top view Fig 2. Pin configuration for HVSON8 SA58631_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 4
SA58631 NXP Semiconductors 3 W BTL audio amplifier 7.2 Pin description Table 3. Pin description Symbol Pin Description MODE 1 operating mode select (standby, mute, operating) SVR 2 half supply voltage, decoupling ripple rejection IN+ 3 positive input IN− 4 negative input OUT− 5 negative output terminal VCC 6 supply voltage GND 7 ground OUT+ 8 positive output terminal 8.
PAGE 5
SA58631 NXP Semiconductors 3 W BTL audio amplifier 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC supply voltage Conditions Min Max Unit operating −0.3 +18 V VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current - 1 A Tstg storage temperature non-operating −55 +150 °C Tamb ambient temperature operating −40 +85 °C - 10 V - 2.
PAGE 6
SA58631 NXP Semiconductors 3 W BTL audio amplifier 11. Static characteristics Table 6. Static characteristics VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage operating Min Typ Max Unit 2.2 9 18 V - 8 12 mA - - 10 µA - 2.
PAGE 7
SA58631 NXP Semiconductors 3 W BTL audio amplifier 13. Application information C1 1 µF R1 11 kΩ VCC R2 56 kΩ IN− IN+ VI SVR 6 4 5 3 OUT− SA58631 RL 2 8 MODE C2 47 µF 1 100 µF 100 nF OUT+ 7 GND 002aac007 R2 Gain = 2 × ------R1 Fig 3. Application diagram of SA58631 BTL differential output configuration 14. Test information 14.1 Test conditions The junction to ambient thermal resistance, Rth(j-a) = 27.
PAGE 8
SA58631 NXP Semiconductors 3 W BTL audio amplifier 002aac008 6.0 Po (W) RL = 8 Ω 002aac009 5.0 P (W) 4.0 (3) (2) 4.0 3.0 16 Ω 2.0 (1) 2.0 1.0 0 0 0 5.0 10.0 15.0 20.0 0 50 100 150 Tamb (°C) VCC (V) (1) No heat spreader. (2) Top only heat spreader (9.7 cm2 (1.5 in2), 35 µm (1 ounce) copper). (3) Both top and bottom heat spreader (approximately 32 cm2 (5 in2), 35 µm (1 ounce) copper). Fig 4. Output power versus supply voltage @ THD+N = 10 %; 32 cm2 (5 in2) heat spreader Fig 5.
PAGE 9
SA58631 NXP Semiconductors 3 W BTL audio amplifier 002aac042 16 VMODE (V) 002aac043 15 Iq (mA) 12 standby 10 8 mute 5 4 operating 0 0 4 8 12 0 16 0 4 8 12 16 20 VCC (V) VCC (V) Fig 6. VMODE versus VCC Fig 7. Iq versus VCC 002aac044 −20 SVRR (dB) 002aac045 10 Vo (V) 1 10−1 −40 10−2 (1) 10−3 (2) −60 (1) (2) (3) 10−4 (3) 10−5 −80 10 102 103 104 105 10−6 10−1 1 VCC = 5 V; RL = 8 Ω; Rs = 0 Ω; VI = 100 mV. Band-pass = 22 Hz to 22 kHz.
PAGE 10
SA58631 NXP Semiconductors 3 W BTL audio amplifier 002aac027 5.0 P (W) 4.0 002aac028 5.0 P (W) 4.0 VCC = 9.0 V 3.0 VCC = 9.0 V 3.0 7.5 V 2.0 7.5 V 2.0 5.0 V 5.0 V 1.0 1.0 0 0 0 0.6 1.2 1.8 2.4 0 0.6 1.2 1.8 Po (W) Fig 10. Power dissipation versus output power; RL = 4.0 Ω; Gv = 10 dB; 9.7 cm2 (1.5 in2) heat spreader 002aac029 3.0 P (W) 2.4 Po (W) Fig 11. Power dissipation versus output power; RL = 4.0 Ω; Gv = 20 dB; 9.7 cm2 (1.5 in2) heat spreader 002aac030 3.0 P (W) VCC = 9.
PAGE 11
SA58631 NXP Semiconductors 3 W BTL audio amplifier 002aac033 3.0 P (W) 002aac034 1.6 P (W) VCC = 9.0 V VCC = 9.0 V 1.2 2.0 7.5 V 7.5 V 0.8 1.0 5.0 V 5.0 V 0.4 0 0 0 1.0 2.0 3.0 4.0 0 1.0 2.0 Po (W) Fig 16. Power dissipation versus output power; RL = 8.0 Ω; Gv = 20 dB; 32 cm2 (5 in2) heat spreader 101 Fig 17. Power dissipation versus output power; RL = 16 Ω; Gv = 20 dB; 32 cm2 (5 in2) heat spreader 002aac035 102 THD+N (%) VCC = 5.0 V 7.5 V 9.0 V VCC = 5.0 V 7.5 V 9.
PAGE 12
SA58631 NXP Semiconductors 3 W BTL audio amplifier 002aac038 2.0 THD+N (%) 1.6 002aac039 1.2 THD+N (%) 0.8 1.2 0.8 0.4 0.4 0 10−1 0 10−1 101 1 101 1 f (kHz) f (kHz) a. RL = 4 Ω b. RL = 8 Ω 002aac040 1.0 THD+N (%) 0.8 0.6 0.4 0.2 0 10−1 101 1 f (kHz) c. RL = 16 Ω Fig 19. THD+N versus frequency SA58631_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 13
SA58631 NXP Semiconductors 3 W BTL audio amplifier 14.3 Single-ended application Tamb = 25 °C; VCC = 7.5 V; f = 1 kHz; RL = 8 Ω; Gv = 20 dB; audio band-pass 20 Hz to 20 kHz. The Single-Ended (SE) application diagram is shown in Figure 20. C1 1 µF R1 11 kΩ VCC R2 110 kΩ IN− IN+ VI SVR 6 4 5 3 OUT− RL 2 1 C3 470 µF SA58631 8 C2 MODE 47 µF 100 µF 100 nF OUT+ 7 GND 002aac041 R2 Gain = ------R1 Fig 20.
PAGE 14
SA58631 NXP Semiconductors 3 W BTL audio amplifier 14.5 SA58631TK PCB demo The application demo board may be used for evaluation in either BTL or SE configuration as shown in the schematics in Figure 3 and Figure 20. The demo PCB is laid out for the 32 cm2 (5 in2) heat spreader (total of top and bottom heat spreader area). top layer bottom layer SA58631TK Rev3 VCC/2 GND VCC GND 6.8 k 6.8 k MS 11 k INPUT 100 nF 1 µF P1 100 µF OUT+ 47 µF OUT− VCC GND 002aac047 Fig 21.
PAGE 15
SA58631 NXP Semiconductors 3 W BTL audio amplifier 15. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 4 x 4 x 0.85 mm SOT909-1 0 1 2 mm scale X B D A A E A1 c detail X terminal 1 index area e1 terminal 1 index area v w b e 1 4 M M C C A B C y1 C y L exposed tie bar (4×) Eh 8 5 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.4 0.
PAGE 16
SA58631 NXP Semiconductors 3 W BTL audio amplifier 16. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 16.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits.
PAGE 17
SA58631 NXP Semiconductors 3 W BTL audio amplifier 16.
PAGE 18
SA58631 NXP Semiconductors 3 W BTL audio amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 23. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 17. Abbreviations Table 10.
PAGE 19
SA58631 NXP Semiconductors 3 W BTL audio amplifier 18. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes SA58631_2 20071012 Product data sheet - SA58631_1 Modifications: SA58631_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate.
PAGE 20
SA58631 NXP Semiconductors 3 W BTL audio amplifier 19. Legal information 19.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 21
SA58631 NXP Semiconductors 3 W BTL audio amplifier 21. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 9 10 11 12 13 14 14.1 14.2 14.3 14.4 14.5 15 16 16.1 16.2 16.3 16.4 17 18 19 19.1 19.2 19.3 19.4 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . .