Datasheet

MPC5674F Microcontroller Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor24
package. A small amount of epoxy is placed over the thermocouple junction and over about 1 mm. of wire extending from the
junction. The thermocouple wire is placed flat against the package case to avoid measurement errors caused by cooling effects
of the thermocouple wire.
References:
Semiconductor Equipment and Materials International
3081 Zanker Road
San Jose, CA 95134
[phone]
MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at 800-854-7179 or
303-397-7956.
JEDEC specifications are available on the WEB at http://www.jedec.org.
• C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive Engine
Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47-54.
• G. Kromann, S. Shidore, and S. Addison, “Thermal Modeling of a PBGA for Air-Cooled Applications,” Electronic
Packaging and Production, pp. 53-58, March 1998.
• B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its Application
in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212-220.
4.3 EMI (Electromagnetic Interference) Characteristics
To find application notes that provide guidance on designing your system to minimize interference from radiated emissions, go
to www.freescale.com and perform a keyword search for “radiated emissions.” The following tables list the values of the
device's radiated emissions operating behaviors.
Table 7. EMC Radiated Emissions Operating Behaviors: 416 BGA
Symbol Description Conditions
f
OSC
f
SYS
Frequency
band (MHz)
Level
(max.)
Unit Notes
V
RE_TEM
Radiated emissions,
electric field and
magnetic field
V
DD
= 1.2 V
V
DDE
= 3.3 V
V
DDEH
= 5 V
T
A
= 25 °C
416 BGA
EBI off
CLK on
FM off
40 MHz crystal
264 MHz
(f
EBI_CAL
=66
MHz)
0.15–50 26 dBV
1
1
Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell
Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM
(GTEM) Cell Method.
50–150 30
150–500 34
500–1000 30
IEC and SAE level I
2
2
I = 36 dBV
—
1, 3
3
Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated
Circuits—TEM/Wideband TEM (GTEM) Cell Method.
V
RE_TEM
Radiated emissions,
electric field and
magnetic field
V
DD
= 1.2 V
V
DDE
= 3.3 V
V
DDEH
= 5 V
T
A
= 25 °C
416 BGA
EBI off
CLK off
FM on
4
40 MHz crystal
264 MHz
(f
EBI_CAL
=66
MHz)
0.15–50 24 dBV
1
50–150 25
150–500 25
500–1000 21
IEC and SAE level K
5
—
1,3