Datasheet

Electrical Characteristics
MPC5674F Microcontroller Data Sheet, Rev. 9
Freescale Semiconductor 25
4.4 ESD Characteristics
4.5 PMC/POR/LVI Electrical Specifications
Note: For ADC internal resource measurements, see Table 20 in Section 4.9.1, “ADC Internal Resource Measurements.”
4
“FM on” = FM depth of ±2%
5
K = 30 dBV
Table 8. EMC Radiated Emissions Operating Behaviors: 516 BGA
Symbol Description Conditions
f
OSC
f
SYS
Frequency
band (MHz)
Level
(max.)
Unit Notes
V
RE_TEM
Radiated emissions,
electric field and
magnetic field
V
DD
= 1.2 V
V
DDE
= 3.3 V
V
DDEH
= 5 V
T
A
= 25 °C
516 BGA
EBI on
CLK on
FM off
40 MHz crystal
264 MHz
(f
EBI_CAL
=66
MHz)
0.15–50 40 dBV
1
1
Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell
Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM
(GTEM) Cell Method.
50–150 48
150–500 48
500–1000 47
IEC and SAE level G
2
2
G = 48 dBV
—
1, 3
3
Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated
Circuits—TEM/Wideband TEM (GTEM) Cell Method.
V
RE_TEM
Radiated emissions,
electric field and
magnetic field
V
DD
= 1.2 V
V
DDE
= 3.3 V
V
DDEH
= 5 V
T
A
= 25 °C
516 BGA
EBI on
CLK on
FM on
4
4
“FM on” = FM depth of ±2%
40 MHz crystal
264 MHz
(f
EBI_CAL
=66
MHz)
0.15–50 40 dBV
1
50–150 44
150–500 41
500–1000 36
IEC and SAE level G
2
—
1, 3
Table 9. ESD Ratings
1,2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits.
2
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
Spec Characteristic Symbol Value Unit
1 ESD for Human Body Model (HBM) V
HBM
2000 V
2 ESD for Charged Device Model (CDM) V
CDM
750 (corners)
500 (other)
V