Datasheet

MPC5674F Microcontroller Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor40
4.10 C90 Flash Memory Electrical Characteristics
Table 22. ADC Band Gap Reference / LVI Electrical Specifications
Spec Characteristic Symbol Min Typ Max Unit
1 4.75 LVD (from V
DDA
)
ADC1 channel 196
V
ADC196
— 4.75 — V
2 ADC Bandgap
ADC0 channel 45
ADC1 channel 45
V
ADC45
1.171 1.220 1.269 V
Table 23. Temperature Sensor Electrical Specifications
Spec Characteristic Symbol Min Typ Max Unit
1Slope
–40 C to 100 C ±1.0 C
100 C to 150 C ±1.6 C
ADC0 channel 128
ADC1 channel 128
V
SADC128
1
1
Slope is the measured voltage change per °C.
— 5.8 — mV/ C
2 Accuracy
–40 C to 150 C
ADC0 channel 128
ADC1 channel 128
——
±10.0
— C
Table 24. Flash Program and Erase Specifications
Spec Characteristic Symbol Min Typ
1
1
Typical program and erase times assume nominal supply values and operation at 25
o
C.
Initial
Max
2
2
Initial factory condition:  100 program/erase cycles, 25
o
C, typical supply voltage, 80 MHz minimum system frequency.
Max
3
3
The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
1 Double Word (64 bits) Program Time
4
4
Program times are actual hardware programming times and do not include software overhead.
t
dwprogram
— 38 — 500 s
2 Page Program Time
4,5
5
Page size is 128 bits (4 words).
t
pprogram
— 45 160 500 s
3 16 KB Block Pre-program and Erase Time t
16kpperase
— 270 1000 5000 ms
4 64 KB Block Pre-program and Erase Time t
64kpperase
— 800 1800 5000 ms
5 128 KB Block Pre-program and Erase Time t
128kpperase
— 1500 2600 7500 ms
6 256 KB Block Pre-program and Erase Time t
256kpperase
— 3000 5200 15000 ms