Datasheet

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DATA SHEET

Product specification

Supersedes data of 1997 Feb 19

1998 Apr 01

INTEGRATED CIRCUITS

TDA8541

1 W BTL audio amplifier

Summary of content (18 pages)

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INTEGRATED CIRCUITS DATA SHEET TDA8541 1 W BTL audio amplifier Product specification Supersedes data of 1997 Feb 19 1998 Apr 01
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 FEATURES GENERAL DESCRIPTION • Flexibility in use The TDA8541(T) is a one channel audio power amplifier for an output power of 1 W with an 8 Ω load at a 5 V supply. The circuit contains a BTL amplifier with a complementary PNP-NPN output stage and standby/mute logic. The TDA8541T comes in an 8 pin SO package and the TDA8541 in an 8 pin DIP package.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 BLOCK DIAGRAM PINNING SYMBOL PIN DESCRIPTION MODE 1 operating mode select (standby, mute, operating) SVR 2 half supply voltage, decoupling ripple rejection IN+ 3 positive input IN− 4 negative input OUT− 5 negative loudspeaker terminal VCC 6 supply voltage handbook, halfpage TDA8541 − IN− IN+ 4 3 5 − + OUT− R VCC 6 R 20 kΩ SVR − − 8 OUT+ 20 kΩ MODE 7 ground OUT+ 8 positive loudspeaker termi
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT −0.3 +18 V −0.3 VCC + 0.3 V − 1 A −55 +150 °C operating ambient temperature −40 +85 °C Vpsc AC and DC short-circuit safe voltage − 10 V Ptot total power dissipation SO8 − 0.8 W DIP8 − 1.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 AC CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS 1 1.2 − W 0.9 − W − 0.15 0.3 % note 1 differential input impedance Vno noise output voltage SVRR supply voltage ripple rejection Vo output voltage in mute condition UNIT 0.6 Po = 0.5 W closed loop voltage gain MAX.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 TEST AND APPLICATION INFORMATION SE application Test conditions Tamb = 25 °C if not specially mentioned, VCC = 7.5 V, f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. Because the application can be either Bridge-Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately. The SE application diagram is shown in Fig.13.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 BTL APPLICATION handbook, full pagewidth VCC C1 R2 R1 56 kΩ 6 IN− 1 μF 11 kΩ 4 5 IN+ Vin OUT− 3 RL TDA8541 SVR C2 47 μF 100 μF 100 nF 2 8 MODE OUT+ 1 7 GND MBH881 R2 Gain = 2 × -------R1 Fig.3 BTL application. MGD876 15 MGD877 10 handbook, halfpage handbook, halfpage Iq (mA) THD (%) (1) 10 1 5 10−1 10−2 10−2 0 0 4 8 12 20 16 VCC (V) 1 Po (W) f = 1 kHz, Gv = 20 dB. (1) VCC = 5 V, RL = 8 Ω.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 MGD878 10 MGD879 −20 handbook, halfpage handbook, halfpage THD (%) SVRR (dB) 1 −40 (1) (2) (1) (2) 10−1 −60 10−2 10 103 102 104 f (Hz) (3) −80 10 105 102 103 104 f (Hz) 105 VCC = 5 V, 8 Ω, Rs = 0 Ω, Vi = 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Po = 0.5 W, Gv = 20 dB. (1) VCC = 5 V, RL = 8 Ω. (2) VCC = 9 V, RL = 16 Ω. Fig.6 THD as a function of frequency. Fig.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 MGD882 1.6 MGD883 10 o (V) 1 handbook, halfpage handbook, V halfpage P (W) (1) 1.2 10−1 10−2 0.8 (1) (2) (3) (2) 10−3 10−4 0.4 10−5 10−6 10−1 0 0 0.5 1 1.5 2 Po (W) 2.5 Fig.10 P as a function of Po. MGL070 16 Vms (V) 12 standby 8 mute 4 operating 0 8 12 VP (V) 16 Fig.12 Vms as a function of VP. 1998 Apr 01 Vms (V) Fig.11 Vo as a function of Vms.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 SE APPLICATION handbook, full pagewidth VCC C1 R2 R1 110 kΩ 6 IN− 1 μF 11 kΩ 4 IN+ Vin 5 3 470 μF 2 MODE C3 OUT− TDA8541 SVR C2 47 μF 100 μF 100 nF 8 1 RL OUT+ 7 GND MBH882 Gain = R2 -------R1 Fig.13 SE application.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 MGD886 −20 MGD887 2 handbook, halfpage handbook, halfpage Po (W) SVRR (dB) 1.6 −40 (1) (3) (2) 1.2 (1) 0.8 (2) −60 (3) −80 10 102 0.4 103 104 f (Hz) 0 105 0 VCC = 7.5 V, RL = 4 Ω, Rs = 0 Ω, Vi = 100mV. (1) Gv = 24 dB. (2) Gv = 20 dB. (3) Gv = 0 dB. 4 8 12 VCC (V) 16 (1) THD = 10%, RL = 4 Ω. (2) THD = 10%, RL = 8 Ω. (3) THD = 10%, RL = 16 Ω. Fig.16 SVRR as a function of frequency. Fig.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 handbook, full pagewidth a. Top view. 6.8 kΩ MS 6.8 kΩ 1 IN 1 μF 11 kΩ 8 TDA8541 4 5 OUT+ OUT− 56 kΩ 100 nF 47 μF 100 μF +VP MBH920 b. Component side. Fig.20 Printed-circuit board layout (BTL and SE).
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 PACKAGE OUTLINES SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 ME seating plane D A2 A A1 L c Z w M b1 e (e 1) b MH b2 5 8 pin 1 index E 1 4 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.14 0.53 0.38 1.07 0.89 0.36 0.23 9.8 9.2 6.48 6.20 2.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 SOLDERING Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Product specification 1 W BTL audio amplifier TDA8541 Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted.
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NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.