Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) or 2-channel (stereo) Class D HSOP 24

1. General description

The TDA8922C is a high-efﬁciency Class D audio power ampliﬁer. Typical output power is

2 × 75 W with a speaker load impedance of 6 Ω.

The TDA8922C is available in both HSOP24 and DBS23P power packages. The ampliﬁer

operates over a wide supply voltage range from ±12.5 V to ±32.5 V and features low

quiescent current consumption.

2. Features

n Pin compatible with TDA8950/20C for both HSOP24 and DBS23P packages

n Symmetrical operating supply voltage range from ±12.5 V to ±32.5 V

n Stereo full differential inputs, can be used as stereo Single-Ended (SE) or mono

Bridge-Tied Load (BTL) ampliﬁer

n High output power in typical applications:

u SE 2 × 75 W, R

=6Ω (V

=30V; V

= −30 V)

u SE 2 × 60 W, R

=8Ω (V

=30V; V

= −30 V)

u BTL 1 × 155 W, R

=8Ω (V

=25V; V

= −25 V)

n Low noise

n Smooth pop noise-free start-up and switch off

n Zero dead time switching

n Fixed frequency

n Internal or external clock

n High efﬁciency

n Low quiescent current

n Advanced protection strategy: voltage protection and output current limiting

n Thermal FoldBack (TFB)

n Fixed gain of 30 dB in SE and 36 dB in BTL applications

n Fully short-circuit proof across load

n BD modulation in BTL conﬁguration

3. Applications

n DVD

n Mini and micro receiver

n Home Theater In A Box (HTIAB) system

n High-power speaker system

TDA8922C

2 × 75 W class-D power ampliﬁer

Rev. 01 — 7 September 2009 Product data sheet

Summary of content (40 pages)

PAGE 1
TDA8922C 2 × 75 W class-D power amplifier Rev. 01 — 7 September 2009 Product data sheet 1. General description The TDA8922C is a high-efficiency Class D audio power amplifier. Typical output power is 2 × 75 W with a speaker load impedance of 6 Ω. The TDA8922C is available in both HSOP24 and DBS23P power packages. The amplifier operates over a wide supply voltage range from ±12.5 V to ±32.5 V and features low quiescent current consumption. 2.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 30 32.5 V General supply voltage VDD Operating mode [1] 12.5 Operating mode [2] VSS negative supply voltage −12.5 −30 −32.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 6. Block diagram VDDA 3 (20) IN1M IN1P n.c. OSC MODE SGND n.c.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 7. Pinning information 7.1 Pinning OSC 1 IN1P 2 IN1M 3 n.c. 4 n.c. 5 n.c. 6 PROT 7 VDDP1 8 BOOT1 9 OUT1 10 VSSP1 11 VSSD 24 1 VSSA STABI 12 VDDP2 23 2 SGND VSSP2 13 BOOT2 22 3 VDDA OUT2 21 4 IN2M BOOT2 15 VSSP2 20 5 IN2P VDDP2 16 n.c. 19 6 MODE 7 OSC VSSA 18 8 IN1P SGND 19 9 IN1M VDDA 20 STABI 18 TDA8922CTH VSSP1 17 OUT1 16 TDA8922CJ OUT2 14 VSSD 17 BOOT1 15 10 n.c. VDDP1 14 11 n.c.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 7.2 Pin description Table 3.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier The TDA8922C single-chip Class D amplifier contains high-power switches, drivers, timing and handshaking between the power switches, along with some control logic. To ensure maximum system robustness, an advanced protection strategy has been implemented to provide overvoltage, overtemperature and overcurrent protection. Each of the two audio channels contains a PWM modulator, an analog feedback loop and a differential input stage.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier To ensure the coupling capacitors at the inputs (CIN in Figure 10) are fully charged before the outputs start switching, a delay is inserted during the transition from Mute to Operating mode. An overview of the start-up timing is provided in Figure 5. audio output (1) modulated PWM VMODE 50 % duty cycle operating > 4.2 V mute 2.1 V < VMODE < 2.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 8.2 Pulse-width modulation frequency The amplifier output signal is a PWM signal with a typical carrier frequency of between 250 kHz and 450 kHz. A second order LC demodulation filter on the output converts the PWM signal into an analog audio signal. The carrier frequency is determined by an external resistor, ROSC, connected between pins OSC and VSSA. The optimal carrier frequency setting is between 250 kHz and 450 kHz.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier TFB is specified at the thermal foldback activation temperature Tact(th_fold) where the closed-loop voltage gain is reduced by 6 dB. The TFB range is: Tact(th_fold) − 5 °C < Tact(th_fold) < Tact(th_prot) The value of Tact(th_fold) for the TDA8922C is approximately 153 °C; see Table 8 for more details. 8.3.1.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier • Short-circuit impedance < Zth: the amplifier limits the maximum output current to IORM and at the same time discharges the capacitor on pin PROT. When CPROT is fully discharged, the amplifier shuts down completely and an internal timer is started. The value of the protection capacitor (CPROT) connected to pin PROT can be between 10 pF and 220 pF (typically 47 pF).
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier Start-up will be interrupted If a short-circuit is detected between one of the output terminals and pin VDDP1/VDDP2 or VSSP1/VSSP2. The TDA8922C will wait until the short-circuit to the supply lines has been removed before resuming start-up. The short circuit will not generate large currents because the short-circuit check is carried out before the power stages are enabled.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier • Stereo operation: to avoid acoustical phase differences, the inputs should be in anti-phase and the speakers should be connected in anti-phase. This configuration: – minimizes power supply peak current – minimizes supply pumping effects, especially at low audio frequencies • Mono BTL operation: the inputs must be connected in anti-parallel.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 10. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-c) thermal resistance from junction to case 1.5 K/W 11. Static characteristics Table 8. Static characteristics VDD = 30 V; VSS = −30 V; fosc = 350 kHz; Tamb = 25 °C; unless otherwise specified.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier Table 8. Static characteristics …continued VDD = 30 V; VSS = −30 V; fosc = 350 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Tact(th_fold) Parameter Conditions thermal foldback activation temperature closed loop SE voltage gain reduced with 6 dB [7] Min Typ Max Unit - 153 - °C [1] VDD is the supply voltage on pins VDDP1, VDDP2 and VDDA. [2] VSS is the supply voltage on pins VSSP1, VSSP2, VSSA and VSSD.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier Table 9. Dynamic characteristics …continued VDD = 30 V; VSS = −30 V; Tamb = 25 °C; unless otherwise specified.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier [1] Rs(L) is the series resistance of the low-pass LC filter inductor used in the application. [2] Output power is measured indirectly; based on RDSon measurement; see Section 13.3. [3] THD measured between 22 Hz and 20 kHz, using AES17 20 kHz brick wall filter; max. limit is guaranteed but may not be 100 % tested. [4] Vripple = Vripple(max) = 2 V (p-p); measured independently between VDDPn and SGND and between VSSPn and SGND.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 13. Application information 13.1 Mono BTL application When using the power amplifier in a mono BTL application, the inputs of the two channels must be connected in anti-parallel and the phase of one of the inputs must be inverted; (see Figure 7). In principle, the loudspeaker can be connected between the outputs of the two single-ended demodulation filters. 13.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 13.3.2 Bridge-Tied Load (BTL) Maximum output power: P o ( 0.5% ) 2 RL ------------------------------------------------------------------- × ( V DD – V SS ) × ( 1 – t w ( min ) × 0.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier Equation 5 defines the relationship between maximum power dissipation before activation of TFB and total thermal resistance from junction to ambient. (5) T j – T amb Rth ( j – a ) = ----------------------P Power dissipation (P) is determined by the efficiency of the TDA8922C. Efficiency measured as a function of output power is given in Figure 20. Power dissipation can be derived as a function of output power as shown in Figure 19.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier In the following example, a heatsink calculation is made for an 8 Ω BTL application with a ±30 V supply: The audio signal has a crest factor of 10 (the ratio between peak power and average power (20 dB)); this means that the average output power is 1⁄10 of the peak power. Thus, the peak RMS output power level is the 0.5 % THD level, i.e. 110 W. The average power is then 1⁄10 × 110 W = 11 W.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier The most effective way to avoid pumping effects is to connect the TDA8922C in a mono full-bridge configuration. In the case of stereo single-ended applications, it is advised to connect the inputs in anti-phase (see Section 8.4 on page 11). The power supply can also be adapted; for example, by increasing the values of the supply line decoupling capacitors. 13.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 13.8 Curves measured in reference design (demonstration board) 010aaa565 10 THD+N (%) 1 (1) 10−1 (2) 10−2 (3) 10−3 10−2 10−1 1 102 10 103 Po (W) VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), 2 × 6 Ω SE configuration. (1) fi = 6 kHz. (2) fi = 1 kHz. (3) fi = 100 Hz. Fig 11.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa567 10 THD+N (%) 1 10−1 (1) (2) 10−2 (3) 10−3 10−2 10−1 1 102 10 103 Po (W) VDD = 25 V, VSS = −25 V, fosc = 350 kHz (external oscillator), 1 × 8 Ω BTL configuration. (1) fi = 6 kHz. (2) fi = 1 kHz. (3) fi = 100 Hz. Fig 13.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa569 10 THD+N (%) 1 10−1 (1) 10−2 (2) 10−3 10 102 103 104 105 fi (Hz) VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), 2 × 8 Ω SE configuration. (1) Po = 1 W. (2) Po = 10 W. Fig 15.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa571 0 αcs (dB) −20 −40 −60 (1) −80 (2) −100 10 102 103 104 105 fi (Hz) VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), 2 × 6 Ω SE configuration. 1 W and 10 W respectively. Fig 17.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa573 30 PD (W 20 (1) (2) (3) 10 0 10−2 10−1 101 1 102 103 Po (W) fi = 1 kHz; fosc = 350 kHz (external oscillator). (1) 2 × 6 Ω SE configuration; VDD = 32 V; VSS = −32 V. (2) 2 × 8 Ω SE configuration; VDD = 32 V; VSS = −32 V. (3) 1 × 8 Ω BTL configuration; VDD = 25 V; VSS = −25 V. Fig 19.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa575 100 Po (W) (1) 80 (2) 60 (3) (4) 40 20 0 12.5 −12.5 17.5 −17.5 22.5 −22.5 32.5 VDD (V) −32.5 VSS (V) 27.5 −27.5 Infinite heat sink used. fi = 1 kHz, fosc = 350 kHz (external oscillator). (1) THD + N = 10 %, 6 Ω. (2) THD + N = 10 %, 8 Ω (3) THD + N = 0.5 %, 6 Ω (4) THD + N = 0.5 %, 8 Ω. Fig 21. Output power as a function of supply voltage, SE configuration 010aaa576 200 Po (W) 160 (1) 120 (2) 80 40 0 12.5 −12.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa577 40 (1) Gv(cl) (dB) (2) 30 (3) 20 10 102 10 103 104 105 fi (Hz) VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), Vi = 100 mV, Ci = 330 pF. (1) 1 × 8 Ω BTL configuration; LLC = 15 µH, CLC = 680 nF, VDD = 25 V, VSS = −25 V. (2) 2 × 8 Ω SE configuration; LLC = 33 µH, CLC = 330 nF, VDD = 30 V, VSS = −30 V. (3) 2 × 6 Ω SE configuration; LLC = 33 µH, CLC = 330 nF, VDD = 30 V; VSS = −30 V. Fig 23.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa579 −20 SVRR (dB) (1) −60 (2) (3) −100 −140 102 10 103 104 105 fi (Hz) Ripple on VSS, short on input pins. VDD = 30 V, VSS = −30 V, Vripple = 2 V (p-p), 2 × 8 Ω SE configuration. (1) Mute mode. (2) Operating mode. (3) Standby mode. Fig 25. SVRR as a function of ripple frequency, ripple on VSS 010aaa586 0 SVRR (dB) −40 (1) −80 (2) (3) −120 102 10 103 104 105 fi (Hz) Ripple on VDD, short on input pins.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa587 0 SVRR (dB) −40 (1) (2) −80 (3) −120 102 10 103 104 105 fi (Hz) Ripple on VSS, short on input pins. VDD = 25 V, VSS = −25 V, Vripple = 2 V (p-p), 1 × 8 Ω BTL configuration. (1) Operating mode. (2) Mute mode. (3) Standby mode. Fig 27. SVRR as a function of ripple frequency, ripple on VSS 010aaa580 102 Vo (V) 1 10−2 10−4 (1) (2) 10−6 0 2 4 6 VMODE (V) VDD = 30 V, VSS = −30 V, Vi = 100 mV. (1) Mode voltage down.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 010aaa581 −50 αmute (dB) −60 −70 (1) −80 (2) −90 10 102 103 104 105 fi (Hz) VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), Vi = 2 V (RMS). (1) 2 × 6 Ω SE configuration. (2) 2 × 8 Ω SE configuration. Fig 29. Mute attenuation as a function of frequency TDA8922C_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 14. Package outline DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 non-concave Dh x D Eh view B: mounting base side A2 d A5 A4 β E2 B j E E1 L2 L3 L1 L 1 e1 Z e 0 5 v M e2 m w M bp c Q 23 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A 2 mm A4 A5 bp c D (1) d D h E (1) e e1 e2 12.2 4.6 1.15 1.65 0.75 0.55 30.4 28.0 12 2.54 1.27 5.08 11.8 4.3 0.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height SOT566-3 E D A x X c E2 y HE v M A D1 D2 12 1 pin 1 index Q A A2 E1 (A3) A4 θ Lp detail X 24 13 Z w M bp e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A2 max. 3.5 3.5 3.2 A3 0.35 A4(1) D1 D2 E(2) E1 E2 e HE Lp Q +0.08 0.53 0.32 16.0 13.0 −0.04 0.40 0.23 15.8 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 15.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 32. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 16. Soldering of through-hole mount packages 16.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 16.4 Package related soldering information Table 14. Suitability of through-hole mount IC packages for dipping and wave soldering Package Soldering method Dipping Wave CPGA, HCPGA - suitable DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable[1] PMFP[2] - not suitable [1] For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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TDA8922C NXP Semiconductors 2 × 75 W class-D power amplifier 20. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.3.1 8.3.1.1 8.3.1.2 8.3.2 8.3.3 8.3.4 8.4 9 10 11 12 12.1 12.2 12.3 13 13.1 13.2 13.3 13.3.1 13.3.2 13.4 13.5 13.6 13.7 13.8 14 15 15.1 15.2 15.3 15.4 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . .