Datasheet

XC7SET02_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 31 August 2009 5 of 11
NXP Semiconductors
XC7SET02
2-input NOR gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 5.0 V.
[3] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ ∑(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V.
Table 8. Dynamic characteristics
GND = 0 V. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
t
pd
propagation
delay
A and B to Y;
see
Figure 5
[1]
V
CC
= 4.5 V to 5.5 V
[2]
C
L
= 15 pF - 3.5 5.5 1.0 6.5 1.0 7.0 ns
C
L
= 50 pF - 4.9 7.5 1.0 8.5 1.0 9.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
= 50 pF; f = 1 MHz;
V
I
= GND to V
CC
[3]
-19- - - - - pF