Datasheet

A2T07H310--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 716 to
960 MHz.
870 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 700 mA, V
GSB
=0.7Vdc,P
out
= 47 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
η
D
(%)
Output PAR
(dB)
ACPR
(dBc)
851 MHz 18.9 50.5 7.7 –29.8
865 MHz 18.9 51.6 7.7 –30.1
880 MHz 18.6 51.3 7.7 –30.9
800 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 700 mA, V
GSB
=0.7Vdc,P
out
= 47 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
η
D
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz 19.5 50.7 7.7 –30.2
806 MHz 19.3 50.8 7.7 –31.2
822 MHz 18.9 50.5 7.7 –32.3
Features
• Advanced High Performance In--Package Doherty
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: A2T07H310--24S
Rev. 0, 6/2014
Freescale Semiconductor
Technical Data
A2T07H310--24SR6
NI--1230S--4L2L
716–960 MHz, 47 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
VBW
A
(1)
VBW
B
(1)
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
1. Device cannot operate with the V
DD
current
supplied through pin 3 and pin 6.
© Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.