Datasheet
A2T07H310--24SR6
15
RF Device Data
Freescale Semiconductor, Inc.
Table 11. Carrier Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQA
= 680 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 0.96 – j2.26 0.93 + j2.40 1.46 – j2.24 20.4 52.8 192 54.3 –9
806 0.95 – j2.37 0.97 + j2.49 1.43 – j2.35 20.2 52.3 171 50.8 –9
822 1.07 – j2.57 1.02 + j2.60 1.42 – j2.59 19.9 52.3 168 50.3 –8
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 0.96 – j2.26 0.90 + j2.48 1.32 – j2.47 18.0 53.8 240 55.5 –12
806 0.95 – j2.37 0.95 + j2.57 1.30 – j2.74 17.7 53.4 218 52.6 –13
822 1.07 – j2.57 1.00 + j2.68 1.36 – j2.90 17.7 53.4 220 53.9 –11
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 12. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,I
DQA
= 680 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 0.96 – j2.26 0.88 + j2.41 4.00 – j0.94 23.4 50.6 114 67.8 –17
806 0.95 – j2.37 0.93 + j2.49 3.65 – j1.48 23.0 50.5 111 63.5 –14
822 1.07 – j2.57 0.99 + j2.61 4.49 – j1.29 23.2 49.9 99 65.5 –13
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 0.96 – j2.26 0.87 + j2.49 4.15 – j1.31 21.4 51.3 135 70.7 –23
806 0.95 – j2.37 0.92 + j2.57 3.82 – j1.72 21.0 51.3 136 67.1 –20
822 1.07 – j2.57 0.99 + j2.70 4.56 – j1.89 21.2 51.0 127 69.4 –18
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit