Datasheet

16
RF Device Data
Freescale Semiconductor, Inc.
A2T07H310--24SR6
Table 13. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,V
GSB
=0.7Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 1.21 – j2.23 1.06 + j2.38 1.11 – j2.38 15.6 53.4 218 54.0 –16
806 1.18 – j2.27 1.11 + j2.50 1.15 – j2.52 15.2 53.1 202 52.6 –16
822 1.32 – j2.41 1.17 + j2.66 1.06 – j2.79 14.8 53.1 203 50.5 –13
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 1.21 – j2.23 1.05 + j2.48 1.04 – j2.59 13.3 54.4 275 55.2 –19
806 1.18 – j2.27 1.10 + j2.61 1.00 – j2.78 12.7 54.2 262 52.5 –19
822 1.32 – j2.41 1.16 + j2.76 1.01 – j2.97 12.5 54.2 263 52.5 –16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 14. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,V
GSB
=0.7Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 1.21 – j2.23 0.98 + j2.27 3.32 – j0.43 17.0 50.5 113 73.5 –28
806 1.18 – j2.27 1.04 + j2.41 3.04 – j0.87 16.6 50.6 114 69.7 –25
822 1.32 – j2.41 1.10 + j2.55 3.34 – j1.03 16.4 50.5 113 70.8 –21
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
790 1.21 – j2.23 0.99 + j2.39 3.41 – j0.81 15.0 51.3 135 73.9 –32
806 1.18 – j2.27 1.05 + j2.52 3.05 – j1.36 14.6 51.7 147 70.9 –29
822 1.32 – j2.41 1.10 + j2.67 3.46 – j1.34 14.3 51.4 138 72.2 –26
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit