Datasheet

2
RF Device Data
Freescale Semiconductor, Inc.
A2T07H310--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +70 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 °C
Case Operating Temperature Range T
C
–40 to +150 °C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 °C
CW Operation @ T
C
=25°C
Derate above 25°C
CW 199
1.8
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 71°C, 47 W W--CDMA, 28 Vdc, I
DQA
= 700 mA, V
GSB
= 0.7 Vdc, 865 MHz
R
θ
JC
0.36 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T
A
=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
=70Vdc,V
GS
=0Vdc)
I
DSS
— — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 μAdc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 μAdc
On Characteristics -- Side A
(4)
(Carrier)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 174 μAdc)
V
GS(th)
1.0 1.5 2.0 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
DA
= 700 mAdc, Measured in Functional Test)
V
GS(Q)
1.5 2.0 2.5 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.74Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
On Characteristics -- Side B
(4)
(Peaking)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 224 μAdc)
V
GS(th)
1.0 1.5 2.0 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.24Adc)
V
DS(on)
0.05 0.1 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)