Datasheet

A2T07H310--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 700 mA, V
GSB
=0.7Vdc,P
out
=47WAvg.,
f = 880 MHz , Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5MHzOffset.
Power Gain
G
ps
17.7 18.6 20.7 dB
Drain Efficiency η
D
48.0 51.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.7 — dB
Adjacent Channel Power Ratio ACPR — –30.9 –26.9 dBc
Load Mismatch
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) I
DQA
= 700 mA, V
GSB
=0.7Vdc,f=865MHz
VSWR 10:1 at 32 Vdc, 316 W CW
(4)
Output Power
(3 dB Input Overdrive from 126 W CW Rated Power)
No Device Degradation
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 700 mA, V
GSB
=0.7Vdc,
851–880 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 126 — W
P
out
@ 3 dB Compression Point
(3)
P3dB — 330 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 851–880 MHz frequency range)
Φ — –21 — °
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 180 — MHz
Gain Flatness in 29 MHz Bandwidth @ P
out
=47WAvg. G
F
— 0.4 — dB
Gain Variation over Temperature
(–30°Cto+85°C)
∆G — 0.01 — dB/°C
Output Power Variation over Temperature
(–30°Cto+85°C)
(4)
∆P1dB — 0.2 — dB/°C
1. Part internally matched both on input and output.
2. Measurement made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.